Gas pulsing for etch profile control
US6784108B1 · kind B1 · utility
528Cited by
11References
40Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Aug 31, 2000 |
| Grant date | Aug 31, 2004 |
| Priority date | — |
| Expiry date | Aug 31, 2020 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01J2237/334
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
Etch profile control with pulsed gas flow and its applications to etching such as anisotropic etching of high aspect ratio features and etching of self-aligned contact structures in various processes. Pulsing can be applied according to this invention to the flow rate of a gas such as an etchant gas, a gas that leads to the deposition of a protective layer, a gas that modifies the deposition of a protective layer, and a gas that modifies etching.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.