Method for surface treatment of silicon based substrate
US6784112B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Apr 3, 2002 |
| Grant date | Aug 31, 2004 |
| Priority date | — |
| Expiry date | Aug 24, 2022 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/3065
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A surface treatment method for thinning a silicon based substrate obtains a milky-dull color on an overall surface uniformly of the silicon based substrate. To be more specific, a surface opposite to a circuit-formed surface is mechanically polished, then the surface is etched using inert gas such as argon gas for producing plasma. This etching forms micro dimples uniformly on the surface. Next, the surface is further etched using fluorine based gas for producing plasma. This etching obtains a milky-dull color uniformly on the surface. As a result, printed marks on the surface can be read with ease, and pick-up errors in die-bonding can be reduced.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.