Semiconductor device and method for producing the same
US6784453B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Jan 6, 2003 |
| Grant date | Aug 31, 2004 |
| Priority date | — |
| Expiry date | Jan 6, 2023 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D86/00
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
In the production of thin film transistor (TFT), a gate insulating film is formed to cover an active layer, a titanium nitride film is formed on the gate insulating film, and an aluminum film used as the gate electrode is formed on the titanium nitride film. The resulted configuration prevents the etching of the aluminum film from the insulating film side even if the etchant of aluminum enters the recessed portion at the edge of the active layer during the patterning of the gate electrode. Also in the anodizing process, when an oxide film is formed on the surface of the aluminum film, the oxidation of aluminum from the gate insulating film side is prevented even when the electrolyte solution enters the recessed portion at the edge of the active layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.