Trench-gate semiconductor devices and the manufacture thereof
US6784488B2 · kind B2 · utility
6Cited by
2References
9Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Nov 12, 2002 |
| Grant date | Aug 31, 2004 |
| Priority date | — |
| Expiry date | Nov 12, 2022 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D62/834
Abstract
A metal-oxide-semiconductor trench-gate semiconductor device in which a substantially intrinsic region (40) is provided below the gate trench (20), which extends from the base of the trench, substantially across the drain drift region (14) towards the drain contact region (14a), such that when the drain-source voltage falls during turn-on of the device its rate of decrease is higher. This reduces the switching losses of the device. The substantially intrinsic region (40) may, for example, be formed by implanting a region below the trench (20) with a damage implant.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.