Semiconductor device having a gate insulating film structure including an insulating film containing metal, silicon and oxygen and manufacturing method thereof
US6784508B2 · kind B2 · utility
38Cited by
14References
7Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Mar 9, 2001 |
| Grant date | Aug 31, 2004 |
| Priority date | — |
| Expiry date | Mar 27, 2021 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/02271
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
Claimed and disclosed is a semiconductor device including a transistor having a gate insulating film structure containing nitrogen or fluorine in a compound, such as metal silicate, containing metal, silicon and oxygen, a gate insulating film structure having a laminated structure of an amorphous metal oxide film and metal silicate film, or a gate insulating film structure having a first gate insulating film including an oxide film of a first metal element and a second gate insulating film including a metal silicate film of a second metal element.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.