Semiconductor device with self-aligned contact and method for manufacturing the device
US6784553B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Jun 11, 2002 |
| Grant date | Aug 31, 2004 |
| Priority date | — |
| Expiry date | Jun 11, 2022 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/76897
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A semiconductor device and a method for manufacturing the semiconductor device with a self-aligned contact, is described. A first conductor and a second conductor are formed on the surface of the semiconductor substrate. The first conductor and the second conductor are encapsulated with a first encapsulation and a second encapsulation, respectively. The first encapsulation and the second encapsulation contain titanium oxide, boron nitride, silicon carbide, magnesium oxide or carbon. The first encapsulation and the second encapsulation are suitable as a self-aligning etch mask for etching a self-aligned contact hole between the first conductor and the second conductor.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.