Ralf Zedlitz
5Patents
3h-index
13Co-inventors
43Inventor score
Filing activity: Feb 28, 2001 → Jul 16, 2003
Most-cited inventions
| Patent | Title | Area | Cited by | Status |
|---|---|---|---|---|
| US6479373B2 | Method of structuring layers with a polysilicon layer and an overlying metal or metal silicide layer using a three step etching process with fluorine, chlorine, bromine containing gases | Electricity | 229 | Expired |
| US7022209B2 | PVD method and PVD apparatus | Electricity | 5 | Expired |
| US6693022B2 | CVD method of producing in situ-doped polysilicon layers and polysilicon layered structures | Electricity | 3 | Expired |
| US6362098B1 | Plasma-enhanced chemical vapor deposition (CVD) method to fill a trench in a semiconductor substrate | Electricity | 2 | Expired |
| US6784553B2 | Semiconductor device with self-aligned contact and method for manufacturing the device | Electricity | 1 | Expired |
Source: USPTO / EPO open patent data. Inventor disambiguation is heuristic; counts are objective bibliographic measures.