Semiconductor device and manufacturing method thereof
US6784554B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Dec 18, 2002 |
| Grant date | Aug 31, 2004 |
| Priority date | — |
| Expiry date | Dec 18, 2022 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH05K3/4602
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
In a semiconductor device in which an LSI chip comprising electrodes with a 100 &mgr;m pitch or less and 50 or more pins is mounted directly on an organic substrate, a mounting structure and a manufacturing method thereof are provided excellent in the solder resistant reflow property, temperature cycle reliability and high temperature/high humidity reliability of the semiconductor device. Electrode Au bumps of the chip and an Au film at the uppermost surface of connection terminals of the substrate are directly flip-chip bonded by Au/Au metal bonding and the elongation of the bonded portion of the Au bump is 2 &mgr;m or more. The method of obtaining the bonded structure involves a process of supersonically bonding both of the bonding surfaces within 10 min after sputter cleaning, under the bonding conditions selected from room temperature on the side of the substrate, room temperature to 150° C. on the side of the chip, a bonding load of ½S×100 MPa to S×180 MPa (S: contact area between bump and chip), a loading mode increasing during bonding, and supersonic application time of 50 to 500 ms.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.