Fault tolerant memory system utilizing memory arrays with hard error detection
US6785837B1 · kind B1 · utility
Assignee
Inventors
Key dates
| Filing date | Nov 20, 2000 |
| Grant date | Aug 31, 2004 |
| Priority date | — |
| Expiry date | May 24, 2022 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG11C2207/104
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
A fault tolerant memory system and method of operation thereof. The fault tolerant memory system includes a number of memory arrays including at least one spare memory array, wherein each of the memory arrays has an internal error detection circuit. In an advantageous embodiment, the internal error detection circuit includes an inverter, a register coupled to the inverter and a comparator for comparing the contents of the inverter and register. The comparator will generate an error signal to indicate a failed memory array in response to the contents of the inverter and register not being equal. The fault tolerant memory system also includes data correction logic that corrects data stored in a failed memory array and, in an advantageous embodiment, restores “corrupted” data in a failed array by reading the content of a row of cells in the failed memory array and generating a first complement of the content. Next, the first complement is written back to the row of cells, following which, the first complement is again read from the failed memory array and a second complement of the first complement is generated to restore the corrupted data to its original “uncorrupt…
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.