Correcting a mask pattern using multiple correction grids
US6785878B2 · kind B2 · utility
2Cited by
8References
20Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Jul 31, 2002 |
| Grant date | Aug 31, 2004 |
| Priority date | — |
| Expiry date | Sep 28, 2022 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG03F1/36
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
Correcting a mask pattern includes accessing a record associated with an uncorrected pattern that comprises segments. The record associates each segment with a correction grid of a number of correction grids, where each correction grid comprises points. A segment is selected, and an optimal correction for the segment is determined. A correction grid associated with the segment is determined. The segment is snapped to a subset of points of the associated correction grid, where the subset of points is proximate to the optimal correction, to form a corrected pattern of a mask pattern.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.