Photoresist residue remover composition
US6787293B2 · kind B2 · utility
6Cited by
5References
6Claims
0Family size
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Key dates
| Filing date | Mar 21, 2003 |
| Grant date | Sep 7, 2004 |
| Priority date | — |
| Expiry date | Mar 21, 2023 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG03F7/423
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A photoresist residue remover composition is provided that includes one type or two or more types of fluoride compound and one type or two or more types chosen from the group consisting of glyoxylic acid, ascorbic acid, glucose, fructose, lactose, and mannose (but excluding one that includes ammonium fluoride, a polar organic solvent, water, and ascorbic acid). There is also provided use of the photoresist residue remover composition for removing a photoresist residue and a sidewall polymer remaining after dry etching and after ashing.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.