Method for manufacturing MTJ cell of magnetic random access memory
US6787372B1 · kind B1 · utility
5Cited by
5References
3Claims
0Family size
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Key dates
| Filing date | Dec 10, 2003 |
| Grant date | Sep 7, 2004 |
| Priority date | — |
| Expiry date | Dec 10, 2023 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01F10/3272
- WIPO fieldElectrical machinery, apparatus, energy
- WIPO sectorElectrical engineering
Abstract
The present invention discloses methods for manufacturing MTJ cell of MRAM wherein two annealing process with different magnitudes of applied magnetic fields are performed. In accordance with the method, the formation process of second pinned magnetic layer comprises a first annealing process and a second annealing process, wherein a magnitude of a magnetic field applied during the first annealing process being larger than that of a magnetic field applied during the second annealing process.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.