Light-emitting device and method for manufacturing the same
US6787383B2 · kind B2 · utility
Assignees
Inventors
Key dates
| Filing date | Sep 26, 2002 |
| Grant date | Sep 7, 2004 |
| Priority date | — |
| Expiry date | Sep 26, 2022 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10H20/8316
Abstract
The light-emitting device 100 has an ITO electrode layer 8 for applying drive voltage for light emission to a light emitting layer section 24, where the light from the light emitting layer section 24 is extracted as being passed through the ITO electrode layer 8. Between the light emitting layer section 24 and the ITO electrode layer 8, an electrode contact layer 7 composed of In-containing GaAs is located so as to contact with such ITO electrode layer 8, where occupied areas and unoccupied areas for the electrode contact layer 7 are arranged in a mixed manner on the contact interface with the transparent electrode layer 8. The electrode contact layer 7 can be obtained by annealing a stack 13, which comprises a GaAs layer 7″ formed on the light emitting layer section 24 and the ITO electrode layer 8 formed so as to contact with the GaAs layer 7″, to thereby allow In to diffuse from the ITO electrode layer to the GaAs layer 7″.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.