Method of fabricating polysilicon film by nickel/copper induced lateral crystallization
US6787434B1 · kind B1 · utility
Assignee
Inventors
Key dates
| Filing date | May 2, 2003 |
| Grant date | Sep 7, 2004 |
| Priority date | — |
| Expiry date | May 2, 2023 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/0262
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
The present invention relates to a method of fabricating polysilicon film by Nickel and Copper induced lateral crystallization for the TFT-LCD, comprising the step of: a) a thin (˜4 nm) Copper and Nickel being evaporated onto the substrate; b) a amorphous-silicon film (˜50 nm) being evaporated onto thereof obtained according to a); c) applying annealing at less than 600° C. to thereof obtained according to b) for fast fabricating poly-silicon film. It is approximately 10 times faster than that of Ni induced polysilicon. The present invention is to provide a low-temperature (<600° C.) fast growth rate process to convert the hydrogenated amorphous silicon (a-Si:H) films to polysilicon film for substantially time-saving process and industrial applicability.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.