Method for fabricating semiconductor device
US6787445B1 · kind B1 · utility
3Cited by
4References
7Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Nov 8, 2000 |
| Grant date | Sep 7, 2004 |
| Priority date | — |
| Expiry date | Nov 8, 2020 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/76801
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A fluorine-containing organic film is deposited on a semiconductor substrate using a material gas containing fluorocarbon as a main component in a reactor chamber of a plasma processing apparatus. The fluorine-containing organic film is then exposed to plasma of a rare gas in the same reactor chamber to densify the fluorine-containing organic film.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.