Manufacture method for semiconductor device having silicon-containing insulating film
US6787474B2 · kind B2 · utility
2Cited by
3References
14Claims
0Family size
Assignee
Inventor
Key dates
| Filing date | Jan 9, 2002 |
| Grant date | Sep 7, 2004 |
| Priority date | — |
| Expiry date | Jan 18, 2022 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/76816
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
The surface of an insulating film made of silicon-containing insulating material is covered with a mask pattern. The insulating film is dry-etched by using the mask pattern as a mask and etching gas which contains C4F8 gas and CxFy gas (wherein x and y are an integer and satisfy x≧5 and y≦(2x−1). In the dry-etching process, a sufficient etching selection ratio can be obtained between a layer to be etched and an underlying etching stopper film.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.