Manufacturing method of semicondcutor device
US6787480B2 · kind B2 · utility
27Cited by
8References
3Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Feb 11, 2002 |
| Grant date | Sep 7, 2004 |
| Priority date | — |
| Expiry date | Feb 11, 2022 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/0217
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
In order to provide a manufacturing method of a semiconductor device which can improve the interconnection lifetime, while controlling the increase in resistance thereof, and, in addition, can raise the manufacturing stability; by applying a plasma treatment to the surface of a copper interconnection 17 with a source gas comprising a nitrogen element being used, a copper nitride layer 24 is formed, and thereafter a silicon nitride film 18 is formed. Hereat, under the copper nitride layer 24, a thin copper silicide layer 25 is formed.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.