Semiconductor memories
US6787835B2 · kind B2 · utility
46Cited by
3References
52Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Jun 11, 2002 |
| Grant date | Sep 7, 2004 |
| Priority date | — |
| Expiry date | Jun 11, 2022 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D89/10
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
A high integration dynamic random access memory is provided by this invention. Furthermore, a write method is provided such that the cell size of two- and three-transistor gain cell memories is reduced. A dynamic memory incorporating a thin-channel transistor as the write element such that long data storage retention is achieved in the memory devices of this invention. A dynamic memory cell having low operating power and high density is also realized by this invention.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.