Kazumasa Yanagisawa
105Patents
21h-index
124Co-inventors
93Inventor score
Filing activity: Mar 15, 1985 → Aug 14, 2019
Most-cited inventions
| Patent | Title | Area | Cited by | Status |
|---|---|---|---|---|
| US5157629A | Selective application of voltages for testing storage cells in semiconductor memory arrangements | Physics | 240 | Expired |
| US4999519A | Semiconductor circuit with low power consumption having emitter-coupled logic or differential amplifier | Electricity | 131 | Expired |
| US6091660A | Semiconductor integrated circuit device | Physics | 97 | Expired |
| US6314044A | Semiconductor integrated circuit device | Physics | 72 | Expired |
| US4964082A | Semiconductor memory device having a back-bias voltage generator | Physics | 58 | Expired |
| US6609236B2 | Semiconductor IC device having a memory and a logic circuit implemented with a single chip | Electricity | 57 | Expired |
| US6787835B2 | Semiconductor memories | Electricity | 46 | Expired |
| US6949782B2 | Semiconductor memories | Electricity | 43 | Expired |
| US7200030B2 | Semiconductor memory device | Physics | 38 | Expired |
| US6847578B2 | Semiconductor integrated circuit and data processing system | Physics | 37 | Expired |
| US6381671B1 | Semiconductor integrated circuit and data processing system | Physics | 34 | Expired |
| US5045904A | Semiconductor device including an improved trench arrangement | Electricity | 33 | Expired |
| US4839865A | Selective application of voltages for testing storage cells in semiconductor memory arrangements | Physics | 31 | Expired |
| US5150325A | Bi-CMOS semiconductor memory device, including improved layout structure and testing method | Physics | 28 | Expired |
| US6115319A | Dynamic RAM having word line voltage intermittently boosted in synchronism with an external clock signal | Physics | 28 | Expired |
| US5371712A | Semiconductor memory device having detection circuitry for sensing faults in word lines | Physics | 25 | Expired |
| US6466482B2 | Semiconductor device | Physics | 22 | Expired |
| US6888395B2 | Semiconductor integrated circuit device | Electricity | 22 | Expired |
| US5226011A | Static type RAM | Physics | 22 | Expired |
| US4736344A | Semiconductor memory | Physics | 22 | Expired |
| US6700429B2 | Semiconductor device | Electricity | 22 | Expired |
| US6108264A | Dynamic type semiconductor memory device | Physics | 21 | Expired |
| US6480425B2 | Semiconductor device | Physics | 21 | Expired |
| US4807190A | Semiconductor integrated circuit device | Physics | 21 | Expired |
| US4961166A | Dynamic RAM having a full size dummy cell | Physics | 21 | Expired |
Source: USPTO / EPO open patent data. Inventor disambiguation is heuristic; counts are objective bibliographic measures.