Metal source and drain mos transistor

US6787845B2 · kind B2 · utility

Assignee

• COMMISSARIAT A L'ENERGIE ATOMIQUE ET AUX ENERGIES ALTERNATIVES · FR

Inventor

• Simon Deleonibus · Le Pont-de-Claix, FR

Key dates

• Filing date: Sep 19, 2002
• Grant date: Sep 7, 2004
• Expiry date: Sep 19, 2022

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10D62/021

Abstract

MOS transistor comprising:a channel region (120) made of a semiconducting material above which there is a grid structure, the grid structure comprising a grid (110) and insulating spacers (122) coating the sides of the grid,regions called source and drain extension regions (116a, 118a) located on each side of the channel, in direct contact with the semiconducting material of the channel, and arranged essentially under the grid structure, the extension regions being made of a non-insulating material,source and drain regions (146, 148) made of metal, in contact with source and drain extension regions respectively and extending partly under the grid structure.Application to manufacturing of integrated circuits.