Dynamic threshold voltage MOS transistor fitted with a current limiter

US6787850B1 · kind B1 · utility

Assignee

• COMMISSARIAT A L'ENERGIE ATOMIQUE ET AUX ENERGIES ALTERNATIVES · FR

Inventor

• Jean-Luc Pelloie · Valbonne, FR

Key dates

• Filing date: Jul 27, 2001
• Grant date: Sep 7, 2004
• Expiry date: Jul 27, 2021

Classification

• Technology area (CPC Y): Emerging Cross-Sectional Technologies
• CPC primary: Y10S257/904

Abstract

The invention concerns a semi-conductor device comprising on a substrate:a first dynamic threshold voltage MOS transistor (10), with a gate (116), and a channel (111) of a first conductivity type, anda current limiter means (20) connected between the gate and the channel of said first transistor.In accordance with the invention, this first transistor is fitted with a first doped zone (160) of the first conductivity type, connected to the channel, and the current limiter means comprises a second doped zone (124) of a second conductivity type, placed against the first doped zone and electrically connected to the first zone by an ohmic connection.Application to the manufacture of CMOS circuits.