One cell programmable switch using non-volatile cell
US6788111B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Oct 18, 2002 |
| Grant date | Sep 7, 2004 |
| Priority date | — |
| Expiry date | Oct 18, 2022 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH03K19/1778
- WIPO fieldBasic communication processes
- WIPO sectorElectrical engineering
Abstract
A one transistor, non-volatile programmable switch comprises a first node and a second node coupled with corresponding circuit elements in an integrated circuit. A single, non-volatile programmable transistor having a drain coupled to one of the first node and second node, a source coupled to the other of the first node and second node, gate coupled to an energizing conductor, the data storage structure constitute the programmable switch. The non-volatile programmable transistor consists of a mask programmable ROM cell, or a charge programmable device, in which the data storage structure comprises a floating gate or a nitride layer, or other charge trapping layer, between oxides or other insulators.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.