Capacitor and method for fabricating the same
US6788521B2 · kind B2 · utility
88Cited by
5References
5Claims
0Family size
Assignee
Inventor
Key dates
| Filing date | Sep 26, 2002 |
| Grant date | Sep 7, 2004 |
| Priority date | — |
| Expiry date | Sep 26, 2022 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D1/682
Abstract
A capacitor which includes a lower electrode 12 formed on a substrate 10; an insulation film 16 having an opening 24 on the lower electrode 12; a capacitor dielectric film 30 formed on the lower electrode 12 in the opening 24 and having a larger thickness at a peripheral part of the opening 24 than at a central part of the opening; and an upper electrode 32 formed on the capacitor dielectric film 30. Thus, degradation of the breakdown voltage and stress resistance of the peripheral part of the opening 24, which is due to the coverage of the capacitor dielectric film, can be suppressed.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.