Sensing device for a passive matrix memory and a read method for use therewith
US6788563B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Jul 2, 2002 |
| Grant date | Sep 7, 2004 |
| Priority date | — |
| Expiry date | Jul 2, 2022 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG11C27/026
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
A sensing device for reading data stored in a passive matrix memory including memory cells in the form of ferroelectric capacitors, includes an integrator circuit for sensing the current response and a device for storing and comparing two consecutive read values, one of which is a reference value. In a read method for use with the sensing device a bit line is connected to the sensing device for sensing a charge flowing therebetween and a memory cell at the crossing of the former and activated word line, whereafter two consecutive reads of the memory cell are performed and integrated over predetermined time periods in order to generate first and second read values which are compared for determining a logical value dependent on the sensed charge.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.