Richard Womack
27Patents
16h-index
15Co-inventors
78Inventor score
Filing activity: Feb 17, 1984 → Apr 12, 2012
Most-cited inventions
| Patent | Title | Area | Cited by | Status |
|---|---|---|---|---|
| US5872739A | Sense amplifier for low read-voltage memory cells | Physics | 67 | Expired |
| US4713678A | dRAM cell and method | Electricity | 56 | Expired |
| US4750839A | Semiconductor memory with static column decode and page mode addressing capability | Physics | 51 | Expired |
| US4800525A | Dual ended folded bit line arrangement and addressing scheme | Physics | 46 | Expired |
| US7924599B1 | Non-volatile memory circuit using ferroelectric capacitor storage element | Physics | 27 | Expired |
| US5434811A | Non-destructive read ferroelectric based memory circuit | Physics | 26 | Expired |
| US5804850A | Ferroelectric based capacitor cell for use in memory systems | Electricity | 25 | Expired |
| US5679969A | Ferroelectric based capacitor for use in memory systems and method for fabricating the same | Electricity | 24 | Expired |
| US4581552A | Power-up clear circuitry having two thresholds | Electricity | 20 | Expired |
| US6117688A | Method for constructing ferroelectric based capacitor for use in memory systems | Electricity | 20 | Expired |
| US5757042A | High density ferroelectric memory with increased channel modulation and double word ferroelectric memory cell for constructing the same | Electricity | 19 | Expired |
| US5541807A | Ferroelectric based capacitor for use in memory systems and method for fabricating the same | Electricity | 19 | Expired |
| US5923583A | Ferromagnetic memory based on torroidal elements | Physics | 18 | Expired |
| US6788563B2 | Sensing device for a passive matrix memory and a read method for use therewith | Physics | 18 | Expired |
| US5789775A | High density memory and double word ferroelectric memory cell for constructing the same | Physics | 17 | Expired |
| US4704705A | Two transistor DRAM cell and array | Physics | 16 | Expired |
| US5864498A | Ferromagnetic memory using soft magnetic material and hard magnetic material | Physics | 13 | Expired |
| US7193881B2 | Cross-point ferroelectric memory that reduces the effects of bit line to word line shorts | Physics | 11 | Expired |
| US6014053A | Amplifier MOS biasing circuit for a avoiding latch-up | Electricity | 9 | Expired |
| US5892255A | Ferroelectric based capacitor for use in memory systems and method for fabricating the same | Electricity | 6 | Expired |
| US5923212A | Bias generator for a low current divider | Physics | 5 | Expired |
| US8023308B1 | Non-volatile memory circuit using ferroelectric capacitor storage element | Physics | 5 | Expired |
| US7345906B2 | Read method and sensing device | Physics | 4 | Expired |
| US8018754B1 | Non-volatile memory circuit using ferroelectric capacitor storage element | Physics | 3 | Expired |
| US7020005B2 | Non-switching pre- and post- disturb compensational pulses | Physics | 2 | Expired |
Source: USPTO / EPO open patent data. Inventor disambiguation is heuristic; counts are objective bibliographic measures.