Magnetic random access memory
US6788570B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Oct 22, 2002 |
| Grant date | Sep 7, 2004 |
| Priority date | — |
| Expiry date | Oct 22, 2022 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG11C11/5607
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
Magnetic random access memories (MRAM) are disclosed. The MRAM stores multi-level data by electronically coupling one diode and a plurality of resistance transfer devices, thereby improving a storage capacity and property of the device and achieving high integration thereof. The MRAM may also include a diode, a word line electrically coupled to the diode, a connection layer electrically coupled to the diode; and a plurality of connection pairs each comprising a resistance transfer device and a bit line electrically coupled to the resistance transfer device. One of the connection pairs may be formed on the connection layer, and the bit line of another connection pair may be perpendicular to the bit line of the first connection pair.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.