Method of statistical binning for reliability selection
US6789032B2 · kind B2 · utility
53Cited by
2References
11Claims
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Key dates
| Filing date | Dec 19, 2002 |
| Grant date | Sep 7, 2004 |
| Priority date | — |
| Expiry date | Dec 19, 2022 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG06F17/18
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
A statistical method is described for reliability selection of dies on semiconductor wafers using critical wafer yield parameters. This is combined with other data from the wafer or module level reliability screens (such as voltage screen or burn-in) to obtain the relative latent defect density. Finally the modeled results are compared with actual results to demonstrate confidence in the model.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.