Diaphragm-type semiconductor pressure sensor
US6789431B2 · kind B2 · utility
Assignee
Inventor
Key dates
| Filing date | May 2, 2003 |
| Grant date | Sep 14, 2004 |
| Priority date | — |
| Expiry date | May 2, 2023 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG01L9/0054
- WIPO fieldMeasurement
- WIPO sectorInstruments
Abstract
A diaphragm-type semiconductor pressure sensor includes a substantially rectangular (110) semiconductor substrate, which has four sides, an active surface of (110) crystallographic face orientation, and a back surface, which is opposite to the active surface, of (110) crystallographic face orientation. Each of the surfaces is surrounded by the four sides. Each of the four sides is at an angle of substantially 45 degrees with a crystallographic axis of <110> orientation that is substantially parallel to the active surface. The substrate includes a diaphragm in the active surface. The diaphragm has been formed by forming a recess in the back surface. The diaphragm includes a gauge resistor. A pressure is detected on the basis of the variation in the resistance of the gauge resistor.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.