Method for manufacturing a semiconductor device
US6790699B2 · kind B2 · utility
4Cited by
5References
26Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Jul 10, 2002 |
| Grant date | Sep 14, 2004 |
| Priority date | — |
| Expiry date | Jul 10, 2022 |
Classification
- Technology area (CPC B)Performing Operations; Transporting
- CPC primaryB81C2203/0735
- WIPO fieldMicro-structural and nano-technology
- WIPO sectorChemistry
Abstract
A method for manufacturing a semiconductor device includes the steps of providing a substrate, depositing a monocrystalline sacrificial layer onto the substrate, depositing a monocrystalline function layer onto the sacrificial layer, and removing at least part of the sacrificial layer after the function layer depositing step.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.