Wire bonding method for copper interconnects in semiconductor devices
US6790757B1 · kind B1 · utility
Assignee
Inventors
Key dates
| Filing date | Dec 20, 1999 |
| Grant date | Sep 14, 2004 |
| Priority date | — |
| Expiry date | Dec 20, 2019 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2924/19043
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
The present invention uses wire bonding technology to bond interconnect materials that oxidize easily by using a wire with stable oxidation qualities. A passivation layer is formed on the semiconductor substrate to encapsulate the bonding pad made from the interconnect material such that the wire bonds with the passivation layer itself, not with the interconnect material. The passivation layer is selected to be a material that is metallurgically stable when bonded to the interconnect material. Since the wire is stable compared with the interconnect material, i.e., it does not readily corrode, a reliable mechanical and electrical connection is provided between the semiconductor device (interconnect material) and the wire, with the passivation layer disposed therebetween.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.