Method for preventing photoresist poisoning
US6790770B2 · kind B2 · utility
21Cited by
3References
20Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Nov 8, 2001 |
| Grant date | Sep 14, 2004 |
| Priority date | — |
| Expiry date | Apr 21, 2022 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/76808
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method if provided for improving a photolithographic patterning process in a dual damascene process by forming a resinous plug in a via opening to prevent out diffusion of nitrogen containing species from a low-k IMD layer in subsequent lithographic patterning and RIE etching processes to form a trench opening formed substantially over the via opening.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.