Semiconductor device
US6791182B2 · kind B2 · utility
0Cited by
3References
40Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Mar 25, 2002 |
| Grant date | Sep 14, 2004 |
| Priority date | — |
| Expiry date | Apr 27, 2022 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2924/181
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
At least a part of the inner leads 1a of a lead frame 1 is covered with a plating for a metallic fine wire connection, at least the entire portion where the lead frame 1 joins with the adhesive layer 2 is covered by at least one metal or alloy thereof different from the metallic fine wire connecting use plating. The metal or alloy is selected from the group consisting of gold, platinum, iridium, rhodium, palladium, ruthenium, indium, tin, molybdenum, tungsten, gallium, zinc, chromium, niobium, tantalum, titanium and zirconium. Thereby, generation of defects, such as leakage and shorting, due to ion migration can be prevented.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.