Plasma processing apparatus and method capable of performing uniform plasma treatment by control of excitation power
US6792889B2 · kind B2 · utility
165Cited by
4References
19Claims
0Family size
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Key dates
| Filing date | Jan 28, 2003 |
| Grant date | Sep 21, 2004 |
| Priority date | — |
| Expiry date | Jan 28, 2023 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01J37/32183
- WIPO fieldElectrical machinery, apparatus, energy
- WIPO sectorElectrical engineering
Abstract
A plasma processing apparatus includes a chassis accommodating an impedance matching circuit. The impedance matching circuit is placed between an RF generator and a plasma excitation electrode. Magnetic probes for detecting a magnetic field generated at a slit in a sidewall of the chassis are placed axisymmetrically. The plasma processing apparatus also includes a feedback circuit for feeding back to an RF generator or a matching circuit so that a current detected by a current-detecting unit maintains a predetermined value.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.