Manufacturing method for semiconductor device
US6794229B2 · kind B2 · utility
19Cited by
12References
15Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Apr 26, 2001 |
| Grant date | Sep 21, 2004 |
| Priority date | — |
| Expiry date | Apr 26, 2021 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D30/6721
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
The present invention is provided in order to remove contamination due to contaminant impurities of the interfaces of each film which forms a TFT, which is the major factor that reduces the reliability of TFTs. By connecting a washing chamber and a film formation chamber, film formation can be carried out without exposing TFTs to the air during the time from washing step to the film formation step and it becomes possible to maintain the cleanliness of the interfaces of each film which form the TFT.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.