Method of chemical modification of structure topography
US6794290B1 · kind B1 · utility
Assignee
Inventors
Key dates
| Filing date | Dec 3, 2001 |
| Grant date | Sep 21, 2004 |
| Priority date | — |
| Expiry date | Dec 3, 2021 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/02274
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method is provided for filling high aspect ratio gaps without void formation by using a high density plasma (HDP) deposition process with a sequence of deposition and hydrogen etch steps. The first step uses an etch/dep ratio less than one to quickly fill the gap. The first step is interrupted before the opening to the gap is closed. The second step uses a hydrogen-based plasma to chemically etch the deposited material to widen the gap. The second step is stopped before corners of the elements forming the gaps are exposed. These steps can be repeated until the aspect ratio of the gap is reduced so that void-free gap-fill is possible. The etch/dep ratio and duration of each step can be optimized for high throughput and high aspect ratio gap-fill capacity.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.