Various methods of controlling conformal film deposition processes, and a system for accomplishing same
US6794299B1 · kind B1 · utility
Assignee
Inventors
Key dates
| Filing date | Jun 3, 2002 |
| Grant date | Sep 21, 2004 |
| Priority date | — |
| Expiry date | Jun 3, 2022 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L22/34
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
Various methods of controlling conformal film deposition processes, and a system for accomplishing same are disclosed. In one embodiment, the method comprises forming a plurality of features above a semiconducting substrate, determining at least one of a critical dimension and a cross-sectional profile of at least one of the plurality of features, determining a thickness for a layer of material to be conformally deposited around the plurality of features based upon at least one of the determined critical dimension and cross-sectional profile and depositing the layer of material around the plurality of features to the determined thickness. In some embodiments, the method further comprises conformally depositing a first layer of material above a plurality of features formed above a semiconducting substrate, measuring a thickness of the first layer of material, determining a thickness of a second layer of material to be conformally deposited around a plurality of features formed above a subsequently processed substrate based upon the measured thickness of the first layer, and conformally depositing the second layer of material to the determined thickness around the plurality of featur…
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.