Method and apparatus for treating low k dielectric layers to reduce diffusion
US6794311B2 · kind B2 · utility
244Cited by
118References
29Claims
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Key dates
| Filing date | Jul 10, 2001 |
| Grant date | Sep 21, 2004 |
| Priority date | — |
| Expiry date | Jul 12, 2021 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10S438/931
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
Methods and apparatus for depositing low dielectric constant layers that are resistant to oxygen diffusion and have low oxygen contents are provided. The layers may be formed by exposing a low dielectric constant layer to a plasma of an inert gas to densify the low dielectric constant layer, by exposing the low dielectric constant layer to a nitrating plasma to form a passivating nitride surface on the layer, or by depositing a thin passivating layer on the low dielectric constant layer to reduce oxygen diffusion therein. The low dielectric constant layer may be deposited and treated in situ.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.