Layering nitrided oxide on a silicon substrate

US6794312B2 · kind B2 · utility

Assignee

• Infineon Technologies AG · DE

Inventors

• Ayad Abdul-Hak · Dresden, DE
• Thomas Gaertner · Radeberg, DE
• Joerg Schulze · Ludwigshafen, DE

Key dates

• Filing date: Jul 11, 2002
• Grant date: Sep 21, 2004
• Expiry date: Sep 10, 2022

Classification

• Technology area (CPC H): Electricity
• CPC primary: H01L21/0214
• WIPO field: Semiconductors
• WIPO sector: Electrical engineering

Abstract

A process for producing a nitrided oxide layer on a silicon semiconductor substrate includes introducing a multiplicity of wafers into an atmospheric batch furnace, carrying out an oxidation step at a first predetermined temperature, carrying out a nitriding step at a second predetermined temperature, and carrying out a reoxidation step at a third predetermined temperature. The wafers are then cooled and removed from the atmospheric batch furnace.