Ion implantation apparatus capable of increasing beam current
US6794661B2 · kind B2 · utility
29Cited by
9References
40Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Apr 9, 2002 |
| Grant date | Sep 21, 2004 |
| Priority date | — |
| Expiry date | May 27, 2022 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01J2237/004
- WIPO fieldElectrical machinery, apparatus, energy
- WIPO sectorElectrical engineering
Abstract
In an ion implantation apparatus according to the present invention, ions are extracted from an ion source with the aid of extraction electrodes. The ions thus extracted are analyzed in mass by means of a mass analysis magnet apparatus and a mass analysis slit, so that the required ions are implanted in a substrate. Magnets for generating cusp magnetic fields are serially disposed along an ion beam line extending from the front part to the rear part of the mass analysis magnet apparatus.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.