High mobility crystalline planes in double-gate CMOS technology

US6794718B2 · kind B2 · utility

Assignee

• International Business Machines Corporation · US

Inventors

• Edward J. Nowak · South Burlington, US
• BethAnn Rainey · South Burlington, US

Key dates

• Filing date: Dec 19, 2002
• Grant date: Sep 21, 2004
• Expiry date: Dec 19, 2022

Classification

• Technology area (CPC H): Electricity
• CPC primary: H01L2924/0002

Abstract

A MOS device with first and second freestanding semiconductor bodies formed on a substrate. The first freestanding semiconductor body has a first portion thereof disposed at a non-orientation orthogonal, non parallel orientation with respect to a first portion of the second freestanding semiconductor body. These portions of said first and second freestanding semiconductor bodies have respective first and second crystalline orientations. A first gate electrode crosses over at least part of said first portion of said first freestanding semiconductor body at a non-orthogonal angle, as does a second gate electrode over the first portion of the second freestanding semiconductor body.