Patent · US Expired

Non-volatile multi-threshold CMOS latch with leakage control

US6794914B2 · kind B2 · utility

237Cited by
7References
24Claims
0Family size

Assignee

Inventors

Key dates

Filing dateMay 24, 2002
Grant dateSep 21, 2004
Priority date
Expiry dateOct 29, 2022

Classification

  • Technology area (CPC H)Electricity
  • CPC primaryH03K3/356121
  • WIPO fieldBasic communication processes
  • WIPO sectorElectrical engineering

Abstract

An integrated circuit including a Multi-Threshold CMOS (MTCMOS) latch combining low voltage threshold CMOS circuits with high voltage threshold CMOS circuits. The low voltage threshold circuits including a majority of the circuits in the signal path of the latch to ensure high performance of the latch. The latch further including high voltage threshold circuits to eliminate leakage paths from the low voltage threshold circuits when the latch is in a sleep mode. A single-phase latch and a two-phase latch are provided. Each of the latches is implemented with master and slave registers. Data is held in either the master register or the slave register depending on the phase or phases of the clock signals. A multiplexer may alternatively be implemented prior to the master latch for controlling an input signal path during sleep and active modes of the latch and for providing a second input signal path for test.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.