Solid state RF power switching network
US6794951B2 · kind B2 · utility
Assignee
Inventor
Key dates
| Filing date | Aug 5, 2002 |
| Grant date | Sep 21, 2004 |
| Priority date | — |
| Expiry date | Aug 5, 2022 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH03H11/28
- WIPO fieldBasic communication processes
- WIPO sectorElectrical engineering
Abstract
An RF matching network includes a switching element that quickly switching between a first matching sub-network and a second matching sub-network, such that the impedance of neither sub-network is coupled to the other when selected by the switch. In one embodiment, the switching element includes a bipolar transistor, a TRIAC device and a PIN diode. The PIN diode conducts or attenuates the RF signal depending on its bias voltage. The bipolar transistor controls the bias voltage on the PIN diode. The TRIAC device protects the bipolar transistor damage that can be caused from high voltages generated at the PIN diode when the PIN diode is not conducting the RF signal.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.