Plasma treatment apparatus and method of producing semiconductor device using the apparatus
US6797112B2 · kind B2 · utility
1Cited by
2References
7Claims
0Family size
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Key dates
| Filing date | Apr 8, 2003 |
| Grant date | Sep 28, 2004 |
| Priority date | — |
| Expiry date | Apr 8, 2023 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/32137
- WIPO fieldElectrical machinery, apparatus, energy
- WIPO sectorElectrical engineering
Abstract
A plasma treatment apparatus which introduces electromagnetic waves from a dielectric window into a chamber evacuated to low pressure has a standing wave controlling part provided near the periphery part of the dielectric window with the portions other than the entrance thereof being surrounded by conductor, and having shape and size thereof equivalent to depth d=l/4+l/2×(n−1)±l/8: (n=positive integer, l=c(light velocity)/f/{square root over (&egr;)}) in terms of the characteristic length.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.