Dual-layer deep ultraviolet photoresist process and structure
US6797456B1 · kind B1 · utility
Assignee
Inventors
Key dates
| Filing date | Aug 1, 2002 |
| Grant date | Sep 28, 2004 |
| Priority date | — |
| Expiry date | Oct 2, 2022 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG03F7/0392
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method for forming a photoresist structure that does not have swelling defects. A layer of low activation energy deep ultraviolet photoresist is disposed over a layer that is to be patterned. A layer of high activation energy deep ultraviolet photoresist is then deposited such that the layer of high activation energy photoresist directly overlies the layer of low activation energy photoresist. The two photoresist layers are then processed by performing exposure, post-exposure bake, and development steps to form a photoresist structure. An etch step is then performed so as to form a patterned layer that does not have swelling defects.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.