Direct implantation of fluorine into the channel region of a PMOS device
US6797555B1 · kind B1 · utility
13Cited by
8References
8Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Sep 10, 2003 |
| Grant date | Sep 28, 2004 |
| Priority date | — |
| Expiry date | Sep 10, 2023 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D64/68
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
Fluorine is implanted directly into the channel region of a PMOS transistor structure, thereby improving the noise and VT drift margin of device performance by introducing Si—F complexes at the substrate-gate oxide interface.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.