Method of fabricating a capacitor of a semiconductor device
US6797561B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Apr 4, 2003 |
| Grant date | Sep 28, 2004 |
| Priority date | — |
| Expiry date | Oct 26, 2023 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D1/684
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method of fabricating a capacitor of a semiconductor device, includes forming a lower electrode on a semiconductor substrate, sequentially forming an aluminum oxide layer and a titanium oxide layer on the lower electrode, and forming an upper electrode on the titanium oxide layer, wherein the upper electrode crosses over the lower electrode. The titanium oxide layer is formed to have a thickness in a range of from about 2 å to about 50 å, and the upper electrode is formed at a temperature in a range of from about 150° C. to about 630° C. The temperature at which the upper electrode is formed is decreased as the thickness of the titanium oxide layer is increased to produce a capacitor of a semiconductor device having a minimized leakage current characteristic.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.