Method for fabrication of emitter of a transistor and related structure
US6797578B1 · kind B1 · utility
3Cited by
1References
12Claims
0Family size
Assignee
Inventor
Key dates
| Filing date | May 13, 2003 |
| Grant date | Sep 28, 2004 |
| Priority date | — |
| Expiry date | May 13, 2023 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D62/133
Abstract
A disclosed embodiment is a method for fabricating an emitter structure, comprising a step of conformally depositing an undoped polysilicon layer in an emitter window opening and over a base. Next, a doped polysilicon layer is non-conformally deposited over the undoped layer. Thereafter, the steps of conformally depositing an undoped polysilicon layer and non-conformally depositing a doped polysilicon layer are repeated until the emitter window opening is filled. The method can further comprise a step of activating dopants. In another embodiment, an emitter structure is fabricated according to the above method.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.