Method for fabricating a bipolar transistor in a BiCMOS process and related structure
US6797580B1 · kind B1 · utility
Assignee
Inventors
Key dates
| Filing date | Feb 21, 2003 |
| Grant date | Sep 28, 2004 |
| Priority date | — |
| Expiry date | Mar 1, 2023 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D84/038
Abstract
According to one exemplary embodiment, a method for fabricating a bipolar transistor in a BiCMOS process comprises a step of forming an emitter window stack by sequentially depositing a base oxide layer and an antireflective coating layer on a top surface of a base, where the emitter window stack does not comprise a polysilicon layer. The method further comprises etching an emitter window opening in the emitter window stack. The method further comprises depositing an emitter layer in the emitter window opening and over the antireflective coating layer and etching the emitter layer to form an emitter. The method further comprises etching a first portion of the base oxide layer not covered by the emitter using a first etchant, thereby causing the first portion of the base oxide layer to have a thickness less than a thickness of a second portion of the base oxide layer covered by the emitter.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.