Metal structure for a phase-change memory device
US6797979B2 · kind B2 · utility
215Cited by
8References
62Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Apr 17, 2003 |
| Grant date | Sep 28, 2004 |
| Priority date | — |
| Expiry date | Apr 17, 2023 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10S438/90
Abstract
The invention relate to a damascene chalcogenide memory cell structure. The damascene chalcogenide memory cell structure is fabricated under conditions that simplify previous process flows. The damascene chalcogenide memory cell structure also prevents volatilization of the chalcogenide memory material.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.