Method of fabrication LCOS structure
US6797983B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Jan 30, 2002 |
| Grant date | Sep 28, 2004 |
| Priority date | — |
| Expiry date | Jun 30, 2022 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG02F1/136277
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
A method is provided to fabricate a LCOS back plane structure. The present invention utilized a HV device such as HV CMOS transistor (high voltage complementary metal oxide semiconductor transistor) and a HV capacitor layer are applied to the substrate. Furthermore, the HV capacitor layer has a higher dielectric layer and coupling ratio to sustain the higher operating voltage, such that the operating capacitance can be raised. Moreover, the HV CMOS transistor is combined with a mirror layer which has a higher reflective property, such that the LCOS back-plate structure has the better contrast and chrominance output in per area unit, when the operating voltage range is increased.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.